Full metadata record
DC FieldValueLanguage
dc.contributor.authorWU, CCen_US
dc.contributor.authorLIN, CJen_US
dc.date.accessioned2014-12-08T15:04:29Z-
dc.date.available2014-12-08T15:04:29Z-
dc.date.issued1993-06-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.353423en_US
dc.identifier.urihttp://hdl.handle.net/11536/2981-
dc.description.abstractThe effect of nonpolar optical phonon scattering on the free-carrier absorption in n-type semiconductors such as germanium has been investigated quantum mechanically in quantizing magnetic fields. It is assumed that the energy band structure of electrons in semiconductors is nonparabolic and the dominant scattering mechanism for conduction electrons is of the nonpolar optical phonon scattering. When the radiation is polarized parallel to a dc magnetic field B, the absorption coefficient appears to be of a complex value due to the interaction between the radiation field and the optical phonon field in nondegenerate semiconductors. Results show that the real part of the absorption coefficient oscillates with the magnetic field in the high-field region, and imaginary part of the absorption coefficient appears with a few extremum points (peaks and dips) in high magnetic fields. These are different from those of the acoustic phonon scattering in III-V compound semiconductors such as InSb or GaAs, in which the absorption coefficient oscillates with the magnetic field in lower magnetic fields and then increases monotonically with the field.en_US
dc.language.isoen_USen_US
dc.titleFREE-CARRIER ABSORPTION OF NONDEGENERATE SEMICONDUCTORS IN QUANTIZING MAGNETIC-FIELDS - NONPOLAR OPTICAL PHONON-SCATTERINGen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.353423en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume73en_US
dc.citation.issue12en_US
dc.citation.spage8319en_US
dc.citation.epage8323en_US
dc.contributor.department應用數學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1993LH22900043-
dc.citation.woscount2-
Appears in Collections:Articles