標題: Ion beam studies of InAs/GaAs quantum dots after annealing
作者: Niu, H.
Chen, C. H.
Wang, H. Y.
Wu, S. C.
Lee, C. P.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: quantum dots;GaAs;InAs;ion-channeling
公開日期: 1-Apr-2008
摘要: The microstructure changes of self-assembled InAs/GaAs quantum dots during RTA treatment was investigated using ion channeling and photoluminescence (PL). A small blueshift of the PL emission is observed for annealing temperatures of 650-800 degrees C and an obvious blueshift at 850 degrees C. The yield of channeled spectra decreased as annealing temperature was increased, but the yield increased while temperature above 800 degrees C in RTA. These results imply the strain of QD varied during RTA treatments. In addition, the As/Ga atomic ratio near the surface was determined from the surface peaks of the channeled spectrum. (c) 2008 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.nimb.2008.02.040
http://hdl.handle.net/11536/29798
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2008.02.040
期刊: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume: 266
Issue: 8
起始頁: 1235
結束頁: 1237
Appears in Collections:Conferences Paper


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