標題: Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition
作者: Wen, TC
Lee, WI
Sheu, JK
Chi, GC
友訊交大聯合研發中心
D Link NCTU Joint Res Ctr
關鍵字: Mg-doped InxGa1-xN;wall measurement;carrier concentration;mobility;in mole fraction;photoluminescence
公開日期: 1-三月-2001
摘要: This study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In mole fraction increase. The highest hole concentration of bull; Mg-doped InxGa1-xN is 1.65 x 10(19) cm(-3). Also, the RT photoluminescence (PL) spectra of Mg related emissions in InxGa1-xN are displayed. However, the PL peak intensity becomes weak after the post-annealing process on Mg-doped InxGa1-xN. This degradation might be created by the surface dissociation during the post-annealing process. (C) 2001 Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0038-1101(01)00044-2
http://hdl.handle.net/11536/29794
ISSN: 0038-1101
DOI: 10.1016/S0038-1101(01)00044-2
期刊: SOLID-STATE ELECTRONICS
Volume: 45
Issue: 3
起始頁: 427
結束頁: 430
顯示於類別:期刊論文


文件中的檔案:

  1. 000168511700009.pdf