標題: High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films
作者: Pan, TM
Lei, TF
Chao, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 5-三月-2001
摘要: High-k cobalt-titanium oxide (CoTiO3) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO3/Si3N4/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO3 gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices. (C) 2001 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1352044
http://hdl.handle.net/11536/29779
ISSN: 0003-6951
DOI: 10.1063/1.1352044
期刊: APPLIED PHYSICS LETTERS
Volume: 78
Issue: 10
起始頁: 1439
結束頁: 1441
顯示於類別:期刊論文


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  1. 000167151300041.pdf