標題: Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes
作者: Chen, GL
Chang, FC
Chung, WC
Huang, BR
Chen, WH
Lee, MC
Chen, WK
電子物理學系
Department of Electrophysics
關鍵字: Ni/Ta/n-GaN;Auger electron spectroscopy
公開日期: 15-三月-2001
摘要: The thermal effects of Ni/Ta/n-GaN Schottky diodes have been investigated for the first time using current-voltage, X-ray photoemission spectroscopy and Auger electron spectroscopy (AES) methods. Their barrier height is found to increase monotonously with increasing annealing temperature up to 800 degreesC. Preliminary results indicate that when a Th intermediate layer is added into the Ni/GaN diodes, it can prevent the metal-semiconductor interdiffusion and Ni accumulation adjacent to GaN substrate to a large extent so that a more thermally stable device can be obtained.
URI: http://dx.doi.org/10.1143/JJAP.40.L255
http://hdl.handle.net/11536/29766
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.L255
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 40
Issue: 3B
起始頁: L255
結束頁: L258
顯示於類別:期刊論文


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  1. 000170776900007.pdf