標題: Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics
作者: Pan, TM
Lei, TF
Chao, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-Mar-2001
摘要: High-k cobalt-titanium oxide (CoTiO3) and nickel-titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k value congruent to 45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices. (C) 2001 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1347405
http://hdl.handle.net/11536/29764
ISSN: 0021-8979
DOI: 10.1063/1.1347405
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 89
Issue: 6
起始頁: 3447
結束頁: 3452
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