標題: Effect of temperature and illumination on the instability of a-Si : H thin-film transistors under AC gate bias stress
作者: Huang, CY
Teng, TH
Yang, CJ
Tseng, CH
Cheng, HC
奈米中心
Nano Facility Center
關鍵字: a-Si : H TFTs;AC;bias-temperature-stress;bias-illumination-stress
公開日期: 1-四月-2001
摘要: This work investigates the temperature and illumination effects on the a-SM thin-film transistors (a-SiH TFTs) under AC gate bias stress to find the larger threshold voltage shift and subthreshold swing change for the bias-temperature-stress (BTS) and bias-illumination-stress (BIS). Excess carriers from thermal-generation electron-hole pairs or photoexcited electron-hole pairs may significantly influence the instability of a-SM TFTs during bias stress. The instability mechanisms originate from the carrier-induced defect Creation enhanced by thermal generation in the BTS case and also emphasized by photoexcitation for the BIS case. Both stress conditions will induce a larger threshold voltage shift and higher cutoff frequency than those for simple bias stresses.
URI: http://dx.doi.org/10.1143/JJAP.40.L316
http://hdl.handle.net/11536/29746
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.L316
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 40
Issue: 4A
起始頁: L316
結束頁: L318
顯示於類別:期刊論文


文件中的檔案:

  1. 000170777200005.pdf