標題: High reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon film
作者: Lee, JW
Lee, CL
Lei, TF
Lai, CS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-2001
摘要: This paper reports the TEOS oxide deposited on the polysilicon film which was prepared by using the disilane chemical vapor deposition. Compared to the thermally grown oxide or TEOS (tetra-ethyl-ortho-silicate) oxide deposited on the conventional silane polysilicon him, it had symmetrical J-E characteristics that had lower leakage currents but much higher breakdown field, a lower electron trapping rate, and a much larger charge to breakdown. These good properties are attributed to the smoother surface of the deposited disilane poly-I film and the more incorporation of nitrogen during the rapid thermal annealing (RTA) in N2O ambient. It is suitable to be as the inter-polyoxide of the electrically-erasable programmable read only memory (EEPROM).
URI: http://dx.doi.org/10.1109/16.915716
http://hdl.handle.net/11536/29744
ISSN: 0018-9383
DOI: 10.1109/16.915716
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 48
Issue: 4
起始頁: 743
結束頁: 749
Appears in Collections:Articles


Files in This Item:

  1. 000167985100018.pdf