標題: The strong degradation of 30 angstrom gate oxide integrity contaminated by copper
作者: Lin, YH
Chen, YC
Chan, KT
Pan, FM
Hsieh, IJ
Chin, A
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-四月-2001
摘要: A much higher leakage current, a lower breakdown effective field, a poorer charge-to-breakdown, and worse stress-induced leakage current are observed in ultrathin 30 Angstrom oxides even at a low Cu contamination of 10 ppb. The strong degradation of the ultrathin gate oxide integrity can be explained by the tunneling barrier lowering and the increased interface trap tunneling due to the presence of Cu in the oxide and at the oxide-Si interface. (C) 2001 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1357182
http://hdl.handle.net/11536/29736
ISSN: 0013-4651
DOI: 10.1149/1.1357182
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 148
Issue: 4
起始頁: F73
結束頁: F76
顯示於類別:期刊論文


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  1. 000168008200050.pdf