標題: Luminescence intensity reduction in Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy
作者: Shu, CK
Chen, HH
Lee, WH
Pan, YC
Huang, HY
Ou, JN
Chen, WK
Chen, WH
Lee, MC
電子物理學系
Department of Electrophysics
關鍵字: impurities in semiconductors;optical properties;luminescence;metastable
公開日期: 1-四月-2001
摘要: Photoluminescence dynamic responses of a heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy have been investigated. As the probe power density increased from 2.5 to 925 W/cm(2), a Mg-related emission band shifted from 2.82 to 3.16 eV revealing characteristics of donor-acceptor pair recombination. The intensity evolution also showed slow decay that suggests the metastable emission behavior. A simple potential barrier model was proposed to occur between the Mg related deep levels and common Mg acceptor level, which impedes electron relaxation and thus slows down the luminescence decay. From the variation of decay time constant with temperature. a barrier energy was deduced to be about 69 meV which is very close to the electrical result of 68 meV.
URI: http://dx.doi.org/10.1143/JJAP.40.L306
http://hdl.handle.net/11536/29721
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.L306
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 40
Issue: 4A
起始頁: L306
結束頁: L308
顯示於類別:期刊論文


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  1. 000170777200002.pdf