標題: Investigation on microstructure in GaN epitaxial growth on the stripe-patterned r-plane sapphire substrates
作者: Chen, Hou-Guang
Ko, Tsung-Shine
Chang, Li
Wu, Yue-Han
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
材料科學與工程學系
光電工程學系
Department of Materials Science and Engineering
Department of Photonics
關鍵字: interface;line defects;metal-organic vapor-phase epitaxy;nitrides;semiconducting III-V materials
公開日期: 1-四月-2008
摘要: This study reports on the reduction of dislocations in the GaN grown on the stripe-patterned r-plane sapphire substrates via metal-organic chemical vapor deposition (MOCVD). The stripes oriented along the sapphire [1 1 (2) over bar 0] direction with asymmetrical side faces were fabricated by lithographic and wet-etching processes. The two etching sides of sapphire-striped mesa are {0 0 0 1} and {1 (1) over bar 0 1} faces. GaN grown on both etching facets exhibits different epitaxial relationships with the sapphire substrate. The GaN grown from the {0 0 0 1} side face of the sapphire mesa contains a low-dislocation density in the order of 10(7) cm(-2). The interfacial regions between the GaN and patterned sapphire substrate are also studied to clarify the behavior of GaN epitaxial growth on the inclined sapphire faces and defect-reduction mechanism. (C) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2007.11.178
http://hdl.handle.net/11536/29720
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2007.11.178
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 310
Issue: 7-9
起始頁: 1627
結束頁: 1631
顯示於類別:會議論文


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