標題: NEW PHYSICAL FORMULATION OF THE THERMIONIC EMISSION CURRENT AT THE HETEROJUNCTION INTERFACE
作者: CHANG, KM
TSAI, JY
CHANG, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jul-1993
摘要: The thermionic emission current for electrons across the heterointerface is classically modeled as the difference between two opposing electron fluxes. Here we have developed a new consistent physical model, which includes the carrier degeneracy and nonideal behavior effects, for thermionic emission current at the heterojunction interface. It is shown that the thermionic emission current at the heterojunction interface can be expressed in a simple closed-form formalism which gives the relations among the average directional thermal velocity of electrons, the conduction band discontinuity, and the carrier activities at both sides of the interface. We also discuss the conditions under which the thermionic emission occurs at the heterointerface.
URI: http://dx.doi.org/10.1109/55.225566
http://hdl.handle.net/11536/2971
ISSN: 0741-3106
DOI: 10.1109/55.225566
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 14
Issue: 7
起始頁: 338
結束頁: 341
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  1. A1993LL51100008.pdf