標題: Non-polar a-plane GaN grown on LaAlO3 (001) substrate by pulsed laser deposition
作者: Ho, Yen-Teng
Liang, Mei-Hui
Hsiao, Feng-Ke
Wang, Wei-Lin
Peng, Chun-Yen
Chen, Wei-Da
Lee, Wei-I
Chang, Li
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: X-ray diffraction;laser epitaxy;nitride
公開日期: 1-四月-2008
摘要: Non-polar (1 1 (2) over bar 0) GaN has been successfully grown on (0 0 1) LaAlO3 (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film as shown by X-ray diffraction. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal two types of a-plane GaN domains perpendicular to each other in orientation relationships of [0 0 0 1](GaN)parallel to[1 (1) over bar 0](LAO) and [1 (1) over bar 0 0](GaN)parallel to[1 (1) over bar 0](LAO). (C) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2007.11.047
http://hdl.handle.net/11536/29709
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2007.11.047
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 310
Issue: 7-9
起始頁: 1614
結束頁: 1618
顯示於類別:會議論文


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