標題: Electrical properties of the free-standing diamond film at high voltages
作者: Huang, BR
Ke, WC
Chen, WK
電子物理學系
Department of Electrophysics
關鍵字: free-standing diamond film;Frenkel-Poole;Coulombic center density;breakdown field
公開日期: 1-五月-2001
摘要: Polycrystalline diamond films were deposited on P-type (100) silicon substrates by the microwave plasma chemical vapor deposition system. The free-standing diamond film was then obtained by etching the silicon substrate with a KOH I solution. It was found that more non-diamond components, i.e., SiC and amorphous carbon, existed on the bottom surface of the free-standing diamond film. Two different contact geometries, coplanar contact and sandwich contact geometries, were used to characterize the in-plane and transverse hi.-h-voltage electrical properties of the free-standing diamond film, respectively. The transverse electrical property of the free-standing diamond film showed the asymmetric current-voltage (1-V) characteristic and lower break-down voltage at -220 V and 850 V. However, the in-plane electrical property exhibited the symmetric I-V characteristic in the range of - 1100 V to 1100 V. The electrical properties were successfully represented by the Frenkel-Poole conduction mechanism at high voltages (> 200 V). The simulated results indicated that the breakdown field was strongly related to the Coulombic center density of the free-standing diamond film.
URI: http://dx.doi.org/10.1143/JJAP.40.3240
http://hdl.handle.net/11536/29693
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.3240
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 40
Issue: 5A
起始頁: 3240
結束頁: 3245
顯示於類別:期刊論文


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  1. 000170772000041.pdf