標題: Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
作者: Chang, SC
Shieh, JM
Lin, KC
Dai, BT
Wang, TC
Chen, CF
Feng, MS
Li, YH
Lu, CP
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-May-2001
摘要: Through elucidating the effects of current density, cupric ion concentration, bath temperature, and air agitation on plating uniformity and filling capability of copper electroplating, the deposition of copper in an acid copper electrolyte will be illustrated to scale down to the sub-0.13 mum features with uniform plating, which is required by chemical mechanical polishing in current damascene techniques. In order to achieve the defect-free filling in sub-0.13 mum vias and trenches, the electrolyte must be composed of proper amounts of cupric ions, sulfuric acid, chloride ions, wetting agent, and filling promoter. The supplied current controlled at a lower current density, agitation acceded to the electroplating process were found as further keys. In the electrolyte, the filling promoter was consisted essentially of thiazole derivatives with benzyl groups and amino-group (-NH2) offering sufficient inhibition on copper depositing and selective inhibition gradient. Moreover, a lower resistivity film and higher filling capability could be obtained by using periodic pulse current plating as compared with direct current plating. (C) 2001 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1368673
http://hdl.handle.net/11536/29681
ISSN: 1071-1023
DOI: 10.1116/1.1368673
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 19
Issue: 3
起始頁: 767
結束頁: 773
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