標題: Beryllium-implanted P-type GaN with high carrier concentration
作者: Yu, CC
Chu, CF
Tsai, JY
Lin, CF
Lan, WH
Chiang, CI
Wang, SC
光電工程學系
Department of Photonics
關鍵字: beryllium;implantation;GaN;MOCVD
公開日期: 1-May-2001
摘要: We report the results of beryllium implantation in Mg-doped GaN to obtain a high hole concentration and lower activation energy for Mg. The metal organic chemical vapor deposition (MOCVD)-grown Mg-doped GaN samples were implanted with Be ions at two different energies of 50 keV and 150 keV and a dose of 10(14) cm(-2). The implemented samples were subsequently annealed at 1100 degreesC for 60 s. The annealed samples showed an increase of hole concentration by three orders of magnitude from the non-implanted value of 5.5 x 10(16) to 8.1 x 10(19) cm(-3) as determined by Hall measurement. The activation energy of Mg dopants for the implanted annealed samples estimated from the temperature dependence of the photoluminescence data is about 170 meV, which is nearly 30% lower than that for the as-grown samples.
URI: http://dx.doi.org/10.1143/JJAP.40.L417
http://hdl.handle.net/11536/29670
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.L417
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 40
Issue: 5A
起始頁: L417
結束頁: L419
Appears in Collections:Articles


Files in This Item:

  1. 000170777600001.pdf