標題: Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment
作者: Pan, TM
Lei, TF
Wen, HC
Chao, TS
電子工程學系及電子研究所
奈米中心
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
關鍵字: N2O;NH3;nitridation;oxynitride;rapid thermal annealing (RTA);Si3N4
公開日期: 1-May-2001
摘要: In this paper, we developed a new method to grow robust ultrathin oxynitride (E-OT = 18 Angstrom) film with effective dielectric constant of 7.15. By NH3-nitridation of Si substrate, grown ultrathin Si3N4 with N2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing, In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.
URI: http://dx.doi.org/10.1109/16.918238
http://hdl.handle.net/11536/29660
ISSN: 0018-9383
DOI: 10.1109/16.918238
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 48
Issue: 5
起始頁: 907
結束頁: 912
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