標題: Electrical properties of shallow p(+)-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxy
作者: Huang, HJ
Chen, KM
Chang, CY
Chao, TS
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-2001
摘要: Strained boron-doped Si1-xGex layers with different Ge mole fractions were selectively deposited by ultrahigh vacuum chemical molecular epitaxy to form shallow p(+)-n junction suitable for raised source/drain metal-oxide-semiconductor field effect transistor applications. Detailed electrical characterizations were performed. Our results show that the reverse leakage current could be optimized by a rapid thermal annealing at 950 degreesC for 20 s, and a near perfect forward ideality factor (i.e., <1.01) is obtained for the p(+)-n Si1-xGex/Si junction. By analyzing the periphery and area leakage current components of p(+)-n Si1-xGex/Si junctions with various perimeter lengths and areas, the degree of misfit dislocations and undercut effect were studied. The specific contact resistance was found to decrease as Ge mole fraction increases. Junction depth measurements also show that the junction depth decreases monotonically with increasing Ge mole fraction. The reduced B diffusion constant is attributed to the increasing Ge gradient in the transition region. (C) 2001 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1321022
http://hdl.handle.net/11536/29652
ISSN: 0021-8979
DOI: 10.1063/1.1321022
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 89
Issue: 9
起始頁: 5133
結束頁: 5137
顯示於類別:期刊論文


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