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dc.contributor.authorCrane, ELen_US
dc.contributor.authorChiu, HTen_US
dc.contributor.authorNuzzo, RGen_US
dc.date.accessioned2014-12-08T15:43:51Z-
dc.date.available2014-12-08T15:43:51Z-
dc.date.issued2001-05-03en_US
dc.identifier.issn1089-5647en_US
dc.identifier.urihttp://hdl.handle.net/11536/29649-
dc.description.abstractThe chemical vapor deposition (CVD) of tungsten nitride from a single source reagent, bis(tertbutylimido)-bis(tertbutylamido)tungsten ((t-BuN)(2)W(NKBut)(2)), is examined with particular focus placed on the mechanisms and energetics involved in the activation and thermal decomposition of this CVD precursor. The main reactions that take place are (1) activated adsorption of the precursor, (2) hydrogen addition/exchange, leading to the evolution of tert-butylamine, (3) ligand activation via both gamma -hydride activation and B-methyl elimination processes, and (4) Ligand decomposition via C-N bond rupture. The activation energies fbr each of these processes were examined and found to be similar to 30 kcal/mol for the process(es) leading to the evolution of tert-butylamine and similar to 40 kcal/mol for the various reactions which lead to the fragmentation of the precursor ligands (pathways which appear to involve both C-H and C-C bond activation as well as the rupture of the ligand C-N bonds). The growth surface of the deposited film contained extensive quantities of carbon in addition to tungsten and nitrogen. The data also suggest that the growth in UHV does not yield a stable bulk nitride phase. Rather, it was found that the nitrogen appears to be present at levels consistent with the formation of a solid solution and that annealing to 700 K results in the loss of the nitrogen from the bulk film (as N-2).en_US
dc.language.isoen_USen_US
dc.titleKinetic and mechanistic studies of the chemical vapor deposition of tungsten nitride from bis(tertbutylimido)bis(tertbutylamido)tungstenen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Ben_US
dc.citation.volume105en_US
dc.citation.issue17en_US
dc.citation.spage3549en_US
dc.citation.epage3556en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000168442100028-
dc.citation.woscount17-
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