標題: Analysis of field emission of fabricated nanogap in Pd strips for surface conduction electron-emitter displays
作者: Lo, Hsiang-Yu
Li, Yiming
Tsai, Chih-Hao
Pan, Fu-Ming
材料科學與工程學系
電信工程研究所
Department of Materials Science and Engineering
Institute of Communications Engineering
關鍵字: nanometer-scale gap;high-pressure hydrogen absorption treatment;three-dimensional finite-difference time-domain particle-in-cell method;surface conduction electron-emitter display;conducting characteristics;field emission efficiency;current density distribution
公開日期: 1-四月-2008
摘要: We study the field emission (FE) property of a nanometer-scale gap structure in a palladium strip, which was fabricated by hydrogen absorption under high-pressure treatment. A vigorous cracking process could be accompanied by extensive atomic migration during the hydrogen treatment. A three-dimensional finite-difference time-domain particle-in-cell method is adopted to simulate the electron emission in a surface-conduction electron-emitter display (SED) device. Examinations of conducting characteristics, FE efficiency, the local field around the emitter, and the current density on the anode plate with one FE emitter are conducted. The image of a light spot is successfully produced on a phosphor plate, which implies that the explored electrode with nanometer separation possesses a potential SED application. Experimental observation and numerical simulation show that the proposed structure can be used as a surface conduction electron emitter and has a high FE efficiency with low turn-on voltage and a different electron emission mechanism. This study benefits the advanced SED design for a new type of electron source.
URI: http://dx.doi.org/10.1143/JJAP.47.2972
http://hdl.handle.net/11536/29643
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.2972
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 47
Issue: 4
起始頁: 2972
結束頁: 2976
顯示於類別:會議論文


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  1. 000255449100141.pdf