標題: Investigation of beryllium implanted P-type GaN
作者: Yu, CC
Chu, CF
Tsai, JY
Wang, SC
光電工程學系
Department of Photonics
關鍵字: beryllium;implant;GaN;photoluminescence
公開日期: 22-May-2001
摘要: We report the preliminary results of beryllium implanted into P-type GaN and the effects on the characteristic of Mg-doped P-GaN. These samples were implanted with Be ions were implanted with two different energies of 50 and 150 keV at two different doses of similar to 10(13) and 10(14) cm(-2) at room temperature. Surface morphology and photoluminescence measurements are presented. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0921-5107(00)00751-0
http://hdl.handle.net/11536/29640
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(00)00751-0
期刊: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume: 82
Issue: 1-3
起始頁: 82
結束頁: 84
Appears in Collections:Conferences Paper


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