標題: Discrete-dopant-fluctuated threshold voltage roll-off in sub-16 nm bulk fin-type field effect transistors
作者: Li, Yiming
Hwang, Chih-Hong
電信工程研究所
Institute of Communications Engineering
關鍵字: threshold voltage fluctuation;random dopant;modeling and simulation;planar MOSFET;bulk FinFET;metal gate
公開日期: 1-Apr-2008
摘要: The effect of the number and position of discrete dopants on device characteristics is crucial in determining the behavior of nanoscale semiconductor devices. We explore the fluctuations of threshold voltage (V(th)) roll-off in nanoscale bulk fin-type field effect transistors (FinFETs) by a three-dimensional (3D) statistically full-scale "atomistic" device simulation technique. The explored devices are of three different dimensions: 16, 22, and 30 nm(3). Discrete dopants are statistically positioned into the 3D channel region to explore associated carrier transport characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". For the device with a gate length of 16 nm, the V(th) fluctuation of FinFETs is only half that of planar metal-oxide-semiconductor (MOS) FET. Compared with planar MOSFETs, the bulk FinFETs can significantly suppress the fluctuation of V(th) roll-off. The standard deviation of V(th) is proportional to (WL)(-0.25), which is better than the (WL)(-0.5) of planar devices. The superior immunity against fluctuation and the stable fluctuation of V(th) roll-off indicate the bulk FinFET to be a promising device for the sub-16 nm technology era.
URI: http://dx.doi.org/10.1143/JJAP.47.2580
http://hdl.handle.net/11536/29632
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.2580
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 47
Issue: 4
起始頁: 2580
結束頁: 2584
Appears in Collections:Conferences Paper


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