標題: Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxides
作者: Wu, ZC
Shiung, ZW
Chiang, CC
Wu, WH
Chen, MC
Jeng, SM
Chang, W
Chou, PF
Jang, SM
Yu, CH
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jun-2001
摘要: This work compares the physical and electrical properties of two species of inorganic low dielectric constant (low-k) chemical vapor deposited (CVD) oxides, F-doped fluorinated silicate glass (FSG, k = 3.5) and C-doped organosilicate glass (OSG, k = 2.9). Experimental results indicate that FSG has a higher thermal stability >600 degreesC! than OSG (500 degreesC), based on the results of thermal annealing for 30 min in an N-2 ambient. The degradation of the low-k property in OSG is mainly due to the thermal decomposition of methyl (-CH3) groups at temperatures above 500 degreesC. For the Cu gated oxide-sandwiched low-k dielectric metal-insulator-semiconductor (MIS) capacitors, Cu penetration was observed in both FSG and OSG after the MIS capacitors were bias-temperature stressed at 250 and 150 degreesC, respectively, with an effective applied field of 0.8 MV/cm. Specifically, Cu appeared to drift more readily in OSG than in FSG, presumably because OSG has a more porous and less dense structure than FSG. The Cu permeation can be impeded by a thin nitride (SiN) barrier layer. (C) 2001 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1368108
http://hdl.handle.net/11536/29631
ISSN: 0013-4651
DOI: 10.1149/1.1368108
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 148
Issue: 6
起始頁: F115
結束頁: F119
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