標題: High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure
作者: Lin, CW
Cheng, LJ
Lu, YL
Lee, YS
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-六月-2001
摘要: High-performance low-temperature poly-Si (LTPS) thin-film transistors (TFTs) have been fabricated by excimer laser crystallization (ELC) with recessed-channel (RC) structure, The TFTs made by this method possessed large longitudinal grains in the channel regions, therefore, they exhibited better electrical char acteristics as compared with the conventional ones. The average field-effect mobility above 300 cm(2)/V-s and on/off current ratio higher than 10(9) were achieved in these RC-structure devices, In addition, since grain growth could be artificially controlled by this method, the device electrical characteristics were less sensitive to laser energy density variation, and therefore the uniformity of device performance could be improved.
URI: http://dx.doi.org/10.1109/55.924838
http://hdl.handle.net/11536/29610
ISSN: 0741-3106
DOI: 10.1109/55.924838
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 22
Issue: 6
起始頁: 269
結束頁: 271
顯示於類別:期刊論文


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