Title: Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric
Authors: Wu, ZC
Chiang, CC
Wu, WH
Chen, MC
Jeng, SM
Li, LJ
Jang, SM
Yu, CH
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: copper;CVD oxides;damascene structures;Frenkel-Poole (F-P) emission;low-k dielectrics;methylsilane;organosilicate glass (OSG)
Issue Date: 1-Jun-2001
Abstract: This letter investigates the leakage mechanism in the Cu damascene structure with methylsilane-doped low-k CVD organosilicate glass (OSG) as the intermetal dielectric (IMD), The leakage between Cu lines was found to be dominated by the Frenkel-Poole (F-P) emission in OSG for the structure using a 50-nm SiC etching stop layer (ESL), In the structure using a 50-nm SiN ESL, the leakage component through SiN also made a considerable contribution to the total leakage in addition to the bulk leakage from trapped electrons in OSG, An appropriate ESL of sufficient thickness is essential to reduce the leakage through the ESL if an ESL is used in the Cu damascene integration scheme.
URI: http://dx.doi.org/10.1109/55.924836
http://hdl.handle.net/11536/29608
ISSN: 0741-3106
DOI: 10.1109/55.924836
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 22
Issue: 6
Begin Page: 263
End Page: 265
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