標題: Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier
作者: Chen, CY
Chang, EY
Chang, L
Chen, SH
材料科學與工程學系
友訊交大聯合研發中心
Department of Materials Science and Engineering
D Link NCTU Joint Res Ctr
關鍵字: copper;GaAs MESFET;metallization;TaN
公開日期: 1-六月-2001
摘要: Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier was studied. A thin TaN layer of 40 nm was sputtered on the GaAs substrate before copper firm metallization. As judged from the data of X-ray diffraction (XRD), Anger electron spectroscopy (AES), and cross-sectional transmission electron microscopy (TEM), the Cu/TaN films with GaAs were very stable without interfacial interaction up to 550 OC annealing, The copper metallized MESFETs were thermally stressed at 300 degreesC, The devices showed very little change in the device characteristics (<3 %) after thermal stress, and the changes of the electrical parameters and RF characteristics of the devices after thermal stress were of the same order as those devices without Cu metallization, These results show that TaN is a good diffusion barrier for Cu in GaAs devices and the Cu/TaN films can be used for the backside copper metallization of GaAs MESFETs.
URI: http://dx.doi.org/10.1109/16.925222
http://hdl.handle.net/11536/29585
ISSN: 0018-9383
DOI: 10.1109/16.925222
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 48
Issue: 6
起始頁: 1033
結束頁: 1036
顯示於類別:期刊論文


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  1. 000169044500002.pdf