標題: Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane
作者: Liu, PT
Chang, TC
Huang, MC
Tsai, MS
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jul-2001
摘要: In this work, chemical-mechanical polishing (CMP) of the organic polymer, methylsilsesquioxane (MSQ), has been investigated. For conventional silicate-based slurry, the CMP removal rate of MSQ is low and many scratches are formed at the surface. Moreover, the dielectric properties of a post-CMP MSQ film are degraded in comparison to the as-cured MSQ. We have proposed a reliable process for the CMP of MSQ which includes a slurry of additive and a post-CMP NH3 plasma treatment. Experimental results show that the modified slurry provides a high polishing rate and uniform surface topography. In addition, the NH3 plasma process can form a thin nitrogen-containing layer on the post-CMP MSQ surface, which enhances the resistance to moisture absorption and copper diffusion. (C) 2001 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1385684
http://hdl.handle.net/11536/29555
ISSN: 1071-1023
DOI: 10.1116/1.1385684
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 19
Issue: 4
起始頁: 1212
結束頁: 1218
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