標題: Comparative study of Schottky diode characteristics in Ni, Ta and Ni/Ta metal contact schemes on n-GaN
作者: Chen, GL
Chang, FC
Chuang, WC
Chung, HM
Shen, KC
Chen, WH
Lee, MC
Chen, NK
電子物理學系
Department of Electrophysics
關鍵字: Ni/Ta/n-GaN;Ta2O5
公開日期: 1-Jul-2001
摘要: We have reported current-voltage characteristics of Ta/- and Ni/Ta/n-GaN Schottky diodes under various thermal treatments. Experimental data indicate that the electrical characteristics of Ni/Ta diodes are controlled by the interfacial properties of the Ta and GaN heterointerface for the as-deposited samples and strongly affected by the presence of an oxide layer (Ta2O5) in those high-temperature-annealed diodes. In regard to Ta/Ni diodes, probably because of thermal stability and wide-bandgap properties of tantalum oxide, dramatic improvement in Schottky diode performance was resulted after annealing at high temperatures. The corresponding barrier height and ideality factor values can reach 1.17 cV and 1.09, respectively, even at an annealing temperature of 800 degreesC.
URI: http://dx.doi.org/10.1143/JJAP.40.L660
http://hdl.handle.net/11536/29542
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.L660
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 40
Issue: 7A
起始頁: L660
結束頁: L662
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