Title: Stack gate PZT/Al2O3 one transistor ferroelectric memory
Authors: Chin, A
Yang, MY
Sun, CL
Chen, SY
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
Keywords: Al2O3;ferroelectric;memory;PZT
Issue Date: 1-Jul-2001
Abstract: We have developed single transistor ferroelectric memory using stack gate PZT/Al2O3 structure. For the same similar to 40 Angstrom dielectric thickness, the PZT/Al2O3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state, The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.
URI: http://dx.doi.org/10.1109/55.930683
http://hdl.handle.net/11536/29531
ISSN: 0741-3106
DOI: 10.1109/55.930683
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 22
Issue: 7
Begin Page: 336
End Page: 338
Appears in Collections:Articles


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