標題: High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices
作者: Yang, WL
Chao, TS
Cheng, CM
Pan, TM
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: barrier height;charge-to-breakdown;dielectric;electric breakdown field;interpoly;nonvolatile memories;polysilicon
公開日期: 1-Jul-2001
摘要: High quality interpoly dielectrics have been fabricated by using NH3 and N2O nitridation on polysilicon and deposition of tetra-ethyl-ortho-silitate (TEOS) oxide with N2O annealing. The surface roughness of polysilicon is improved and the value of weak bonds is reduced due to nitrogen incorporation at the interface, which improves the integrity of interpoly dielectrics, The improvements include a higher barrier height, breakdown strength, and charge-to-breakdown, and a lower leakage current and charge trapping rate than counterparts. It is found that this method can simutaneously improve both charge-to-breakdown (up to 20 C/cm(2)) and electric breakdown field (up to 17 MV/cm).
URI: http://dx.doi.org/10.1109/16.930643
http://hdl.handle.net/11536/29516
ISSN: 0018-9383
DOI: 10.1109/16.930643
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 48
Issue: 7
起始頁: 1304
結束頁: 1309
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