標題: Electrical properties of Mg/La, Mg/Nb co-doped (Ba0.7Sr0.3)TiO3 thin films prepared by metallo-organic deposition method
作者: Chen, SY
Wang, HW
Huang, LC
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: electrical properties;BST thin films;Mg/La codoped;Mg/Nb codoped;leakage current
公開日期: 1-Aug-2001
摘要: (Ba0.7Sr0.3)TiO3 (BST) thin films doped with La, Nb and Mg ions along with an Mg/La, Mg/Nb codopant were prepared on Pt/Ti/SiO2/Si substrates by the metal-organic deposition method. A decrease of grain size, dielectric constant, and leakage current with increasing doping levels was observed for all studied cases. The grain size, dielectric constant and leakage current increased with increasing annealing temperatures for specimens doped with a single dopant. However, the leakage current was reduced to a minimum for the codoped materials at the donor/acceptor compensated concentration and decreased with increasing annealing temperatures. The decreased leakage current of the codoped materials could be explained by the additional barrier height and width of the insulating layer caused by the defect dipoles around grain boundaries.
URI: http://hdl.handle.net/11536/29485
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 40
Issue: 8
起始頁: 4974
結束頁: 4978
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