標題: Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain
作者: Huang, HJ
Chen, KM
Huang, TY
Chao, TS
Huang, GW
Chien, CH
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: low temperature measurements;PMOSFET;selective epitaxial growth (SEG);short channel effect;strained-SiGe;ultra-high vacuum chemical vapor deposition
公開日期: 1-Aug-2001
摘要: P-channel metal-oxide-semiconductor field-effect transistors with Si1-xGex raised source and drain (RSD) have been fabricated and further studied for low temperature applications. The Si1-xGex RSD layer was selectively grown by ANELVA. SRE-612 ultra-high vacuum chemical vapor deposition (UHVCVD) system, Compared to devices with conventional Si RSD, improved transconductance and specific contact resistance were obtained, and these improvements become even more dramatic with reducing channel length, Well-behaved short channel characteristics with reduced drain-induced barrier lowering (DIBL) and off-state leakage current are demonstrated on devices with 100 nm Si1-xGex RSD, due to the resultant shallow junction and less implantation damage. Moreover, temperature measurements reveal that Si1-xGex RSD devices show more dramatic improvement in device performance at low temperature (-50 degreesC) operation, which can be ascribed to the higher temperature sensitivity of the Si1-xGex sheet resistance.
URI: http://dx.doi.org/10.1109/16.936576
http://hdl.handle.net/11536/29483
ISSN: 0018-9383
DOI: 10.1109/16.936576
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 48
Issue: 8
起始頁: 1627
結束頁: 1632
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