標題: Annealing characteristics of pulsed laser deposited homoepitaxial SrTiO3 thin films
作者: Lee, JY
Juang, JY
Wu, KH
Uen, TM
Gou, YS
電子物理學系
Department of Electrophysics
關鍵字: epitaxy;growth;reflection high-energy electron diffraction (RHEED);atomic force microscopy
公開日期: 10-八月-2001
摘要: The homoepitaxial growth of SrTiO3 (STO) films on as-polished STO(1 0 0) substrates by pulsed laser deposition has been exploited in detail. The intimate correlation between the surface step edge density and reflection high-energy electron diffraction (RHEED) intensity is clearly demonstrated by measuring the relation between the initial RHEED intensity drop and laser repetition rates. Systematic in situ annealing schemes were performed to investigate the film growth mechanisms. The results indicate that the two or three level growth May have occurred during some annealing schemes and can be interpreted by Stoyanov's step edge density model. Complementary atomic force microscopy investigations of the film surfaces further tend direct support to the RHEED intensity observations. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0039-6028(01)01087-1
http://hdl.handle.net/11536/29457
ISSN: 0039-6028
DOI: 10.1016/S0039-6028(01)01087-1
期刊: SURFACE SCIENCE
Volume: 488
Issue: 3
起始頁: 277
結束頁: 285
顯示於類別:期刊論文


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  1. 000170568800004.pdf