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dc.contributor.authorChang, Len_US
dc.contributor.authorLai, SKen_US
dc.contributor.authorChen, FRen_US
dc.contributor.authorKai, JJen_US
dc.date.accessioned2014-12-08T15:43:34Z-
dc.date.available2014-12-08T15:43:34Z-
dc.date.issued2001-08-13en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1391409en_US
dc.identifier.urihttp://hdl.handle.net/11536/29456-
dc.description.abstractTransmission electron microscopy has been used to observe Al segregation around the threading dislocations in Al0.1Ga0.9N and Al0.3Ga0.7N grown by metalorganic chemical vapor deposition on 6H-SiC. Dislocation lines were found to have up to 70% more Al concentration than those regions free of dislocations in the matrix. The Al-depleted regions around the dislocations are shown to be within a few nanometers from the dislocation lines. The results also show that more Al segregate to edge dislocations than to screw ones. (C) 2001 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleObservations of Al segregation around dislocations in AlGaNen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1391409en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume79en_US
dc.citation.issue7en_US
dc.citation.spage928en_US
dc.citation.epage930en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000170277500012-
dc.citation.woscount11-
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