標題: Observations of Al segregation around dislocations in AlGaN
作者: Chang, L
Lai, SK
Chen, FR
Kai, JJ
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 13-Aug-2001
摘要: Transmission electron microscopy has been used to observe Al segregation around the threading dislocations in Al0.1Ga0.9N and Al0.3Ga0.7N grown by metalorganic chemical vapor deposition on 6H-SiC. Dislocation lines were found to have up to 70% more Al concentration than those regions free of dislocations in the matrix. The Al-depleted regions around the dislocations are shown to be within a few nanometers from the dislocation lines. The results also show that more Al segregate to edge dislocations than to screw ones. (C) 2001 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1391409
http://hdl.handle.net/11536/29456
ISSN: 0003-6951
DOI: 10.1063/1.1391409
期刊: APPLIED PHYSICS LETTERS
Volume: 79
Issue: 7
起始頁: 928
結束頁: 930
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