標題: Gamma-ray induced deep electron traps in GaInP
作者: Sung, WJ
Liu, TY
Yang, SL
Huang, KF
Tseng, TY
Chou, FI
Wei, YY
Wu, YR
電子物理學系
Department of Electrophysics
關鍵字: GaInP;gamma-ray;irradiation;defect;trap;deep level;DLTS
公開日期: 1-Sep-2001
摘要: Deep electron traps created by gamma-ray irradiation of Au/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Three distinct deep electron traps, G1, G2 and G3, were observed in the irradiated GaInP samples. According to the analysis of trap properties in various samples. trap G1 is verified as a bulk defect located at 0.13 eV below the conduction band, while trap G2 and G3 are interface states originated from the junctions of Au/Te-doped GaInP contacts.
URI: http://dx.doi.org/10.1143/JJAP.40.5306
http://hdl.handle.net/11536/29439
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.5306
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 40
Issue: 9A
起始頁: 5306
結束頁: 5307
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