標題: Optimization of short channel effect with arsenic halo implant through polysilicon gate
作者: Chen, CM
Chang, CY
Chou, JW
Cheng, YC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOS devices;arsenic;halo;short channel effect
公開日期: 1-Sep-2001
摘要: Excellent p-type metal oxide semiconductor (PMOS) short channel effect is achieved by using a high-energy, large tilt angle arsenic implant as a P-channel halo. For the first time, it was found that the dopant profile of Halo was implanted through the poly-silicon gate. The channel concentration is modulated not only laterally from the gate edge but also vertically from the top of the polysilicon gate and this resulted in very flat short channel behavior. The effect of the arsenic halo implant was comprehensively studied and well characterized to explain this specific phenomenon. The gate-oxide integrity was examined by charge to break down (Q(BD)). Excellent performance of 0.12 mum PMOSFET is also demonstrated in this work.
URI: http://dx.doi.org/10.1143/JJAP.40.5257
http://hdl.handle.net/11536/29437
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.5257
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 40
Issue: 9A
起始頁: 5257
結束頁: 5261
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