標題: Pressure-induced phase transitions in bulk Zn1-xMnxSe
作者: Lin, CM
Chuu, DS
電子物理學系
Department of Electrophysics
關鍵字: pressure-induced phase transitions;Zn1-xMnxSe;EDXD
公開日期: 1-Sep-2001
摘要: Energy-dispersive X-ray-diffraction (EDXD) is used to study the pressure-induced transitions of Zn1-xMnxSe bulk samples, x = 0.016, 0.026, 0.053, 0.07, and 0.24, below 30 GPa. The EDXD results show that possible structure transitions from the zinc blende (B3) to the sodium chloride phase (B1) for Zn0.984Mn0.016Se. Zn0.974Mn0.026Se, Zn-0.947 Mn0.053Se, Zn0.93Mn0.07Se, and Zn0.76Mn0.24Se occur at 13.1, 12.4, 12.0, 11.8, and 9.6 GPa, respectively, The unloading run (the measurement with decreasing pressure) reveals that a reversible phase transition exists in the bulk Zn1-xMnxSe. In this work, our EDXD data show that the larger the increase of the fractional volume change at the phase transition from the B3 to the B1 region, the larger is the decrease of the reduction of the semiconductor-metal phase transition pressure. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0921-4526(01)00547-6
http://hdl.handle.net/11536/29419
ISSN: 0921-4526
DOI: 10.1016/S0921-4526(01)00547-6
期刊: PHYSICA B
Volume: 304
Issue: 1-4
起始頁: 221
結束頁: 227
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