標題: Correlation between defect concentration and carrier lifetime of GaAs grown by molecular beam epitaxy at different temperatures
作者: Lin, GR
Liu, TA
Pan, CL
光電工程學系
Department of Photonics
關鍵字: ultrafast;LT-GaAs;carrier lifetime;defect;MBE;photo-reflectivity;pump-probe
公開日期: 1-Nov-2001
摘要: A pump-probe study of GaAs grown by molecular beam epitaxy at low temperatures (LT-GaAs) is performed. Ultrashort carrier lifetimes of the as-grown LT-GaAs increase from <0.13 ps (measurement limitation) to 1.8 +/-0.2 ps as the growth temperature is increased from 200 degreesC to 320 degreesC. The carrier lifetime was found to be approximately inversely proportional to the antisite defect concentration. This trend is found to be in reasonably good agreement with the Schokley-Read-Hall model. The decreasing trend in the amplitudes of continuous-wave and transient reflectivities (DeltaR/R) as a function of the growth temperature for the LT-GaAs is explained as an induced absorption caused by dense arsenic antisite defects. The sign of the transient DeltaR/R reversed for LT-GaAs grown at 200 degreesC. This is tentatively attributed to the band gap renormalization effect.
URI: http://hdl.handle.net/11536/29318
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 40
Issue: 11
起始頁: 6239
結束頁: 6242
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