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dc.contributor.authorChuang, KLen_US
dc.contributor.authorChang, Len_US
dc.contributor.authorLu, CAen_US
dc.date.accessioned2014-12-08T15:43:18Z-
dc.date.available2014-12-08T15:43:18Z-
dc.date.issued2001-11-01en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0254-0584(01)00431-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/29315-
dc.description.abstractBias enhanced nucleation of diamond on polycrystalline Cu substrates has been investigated. With CH4 concentration increased, the nucleation density is increased and saturated at 10% CH4, but the quality of diamond is decreased. Bias voltages also play an important role on the nucleation of diamond. It is found that the nucleation density is highest when the voltage was set at -250 V. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectnucleationen_US
dc.subjectplasmaen_US
dc.subjectchemical vapor depositionen_US
dc.titleDiamond nucleation on Cu by using MPCVD with a biasing pretreatmenten_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0254-0584(01)00431-Xen_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume72en_US
dc.citation.issue2en_US
dc.citation.spage176en_US
dc.citation.epage180en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000171822100016-
Appears in Collections:Conferences Paper


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