標題: Diamond nucleation on Cu by using MPCVD with a biasing pretreatment
作者: Chuang, KL
Chang, L
Lu, CA
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: nucleation;plasma;chemical vapor deposition
公開日期: 1-Nov-2001
摘要: Bias enhanced nucleation of diamond on polycrystalline Cu substrates has been investigated. With CH4 concentration increased, the nucleation density is increased and saturated at 10% CH4, but the quality of diamond is decreased. Bias voltages also play an important role on the nucleation of diamond. It is found that the nucleation density is highest when the voltage was set at -250 V. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0254-0584(01)00431-X
http://hdl.handle.net/11536/29315
ISSN: 0254-0584
DOI: 10.1016/S0254-0584(01)00431-X
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 72
Issue: 2
起始頁: 176
結束頁: 180
Appears in Collections:Conferences Paper


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