標題: A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature
作者: Lee, WH
Lin, JC
Lee, C
Cheng, HC
Yew, TR
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: chemical vapor depositions;electron cyclotron resonance;silicon carbide;transmission electron microscopy
公開日期: 1-Nov-2001
摘要: Electron cyclotron resonance chemical vapor deposition (ECR-CVD) of SiC films from silane and methane gas mixtures at low temperature has been investigated using two different carrier gases, namely, argon and hydrogen. The results obtained are compared. The chemical composition and crystalline microstructure were investigated by Fourier transform infrared spectroscopy (FTIR) and cross-sectional transmission electron microscopy (XTEM), respectively. The results indicate that the carrier gases have a greater influence on the film composition and microstructure as compared to the growth parameters like pressure, power and flow ratio. The deposition mechanism which controls the film characteristics is also presented. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0925-9635(01)00482-4
http://hdl.handle.net/11536/29313
ISSN: 0925-9635
DOI: 10.1016/S0925-9635(01)00482-4
期刊: DIAMOND AND RELATED MATERIALS
Volume: 10
Issue: 11
起始頁: 2075
結束頁: 2083
Appears in Collections:Articles


Files in This Item:

  1. 000171738400021.pdf