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dc.contributor.authorPan, TMen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorKo, FHen_US
dc.contributor.authorChao, TSen_US
dc.contributor.authorChiu, THen_US
dc.contributor.authorLee, YHen_US
dc.contributor.authorLu, CPen_US
dc.date.accessioned2014-12-08T15:43:18Z-
dc.date.available2014-12-08T15:43:18Z-
dc.date.issued2001-11-01en_US
dc.identifier.issn0894-6507en_US
dc.identifier.urihttp://dx.doi.org/10.1109/66.964323en_US
dc.identifier.urihttp://hdl.handle.net/11536/29310-
dc.description.abstractIn this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical property for the capacitor.en_US
dc.language.isoen_USen_US
dc.subjectchelating agentsen_US
dc.subjectcitric aciden_US
dc.subjectCMPen_US
dc.subjectEDTAen_US
dc.subjectoxalic aciden_US
dc.subjectparticles and metallic impuritiesen_US
dc.subjectTMAHen_US
dc.titleComparison of novel cleaning solutions, with various chelating agents for post-CMP cleaning on poly-Si filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/66.964323en_US
dc.identifier.journalIEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURINGen_US
dc.citation.volume14en_US
dc.citation.issue4en_US
dc.citation.spage365en_US
dc.citation.epage371en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000172231100008-
dc.citation.woscount5-
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