標題: Comparison of novel cleaning solutions, with various chelating agents for post-CMP cleaning on poly-Si film
作者: Pan, TM
Lei, TF
Ko, FH
Chao, TS
Chiu, TH
Lee, YH
Lu, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: chelating agents;citric acid;CMP;EDTA;oxalic acid;particles and metallic impurities;TMAH
公開日期: 1-Nov-2001
摘要: In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical property for the capacitor.
URI: http://dx.doi.org/10.1109/66.964323
http://hdl.handle.net/11536/29310
ISSN: 0894-6507
DOI: 10.1109/66.964323
期刊: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume: 14
Issue: 4
起始頁: 365
結束頁: 371
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