標題: Cu contamination effect in oxynitride gate dielectrics
作者: Lin, YH
Pan, FM
Liao, YC
Chen, YC
Hsieh, IJ
Chin, A
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-2001
摘要: We have studied the effect of Cu contamination in oxynitride gate dielectrics. Compared to thermal SiO2 with a physical thickness of 3-5 nm, the oxynitride shows a much improved Cu contamination resistance. Furthermore, the Cu contamination resistance increases with increasing nitrogen content. The mechanism of improved gate dielectric resistance to Cu is due to the strong diffusion barrier properties of oxynitride as observed by secondary ion mass spectroscopy. (C) 2001 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1407834
http://hdl.handle.net/11536/29307
ISSN: 0013-4651
DOI: 10.1149/1.1407834
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 148
Issue: 11
起始頁: G627
結束頁: G629
顯示於類別:期刊論文


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  1. 000171653100044.pdf