標題: Characteristics of Pb(Zr0.53Ti0.47)O-3 on metal and Al2O3/Si substrates
作者: Sun, CL
Chen, SY
Yang, MY
Chin, A
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Nov-2001
摘要: We have fabricated Pb(Zr0.53Ti0.47)O-3 on Pt and Pb(Zr0.53Ti0.47)O-3 on 4 nm Al2O3/Si substrates. Although Pb(Zr0.53Ti0.47)O-3 on Pt has a larger dielectric constant and grain size than those on Al2O3/Si, the Pb(Zr0.53Ti0.47)O-3 thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of similar to3.6 V. Moreover, the leakage current density of Pb(Zr0.53Ti0.47)O-3 on Al2O3/Si at -10 V is nearly three orders of magnitude lower than that of Pb(Zr0.53Ti0.47)O-3 on Pt. The comparable memory characteristics and the lower leakage current of Pb(Zr0.53Ti0.47)O-3 on Al2O3/Si are important for continuous scaling down the ferroelectric memory. (C) 2001 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1409398
http://hdl.handle.net/11536/29306
ISSN: 0013-4651
DOI: 10.1149/1.1409398
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 148
Issue: 11
起始頁: F203
結束頁: F206
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