|標題:||Testing Methodology of Embedded DRAMs|
Chao, Mango C. -T.
Department of Electronics Engineering and Institute of Electronics
|摘要:||The embedded-DRAM testing mixes up the techniques used for DRAM testing and SRAM testing since an embedded-DRAM core combines DRAM cells with an SRAM interface (the so-called IT-SRAM architecture). In this paper we first present our test algorithm for embedded-DRAM testing. A theoretical analysis to the leakage mechanisms of a switch transistor is also provided, based on that we can test the embedded-DRAM at a higher temperature to reduce the total test time and maintain the same retention-fault coverage. The experimental results art? collected based on I-lot wafers with an 16Mb embedded DRAM core.|
|期刊:||2008 IEEE INTERNATIONAL TEST CONFERENCE, VOLS 1 AND 2, PROCEEDINGS|
|Appears in Collections:||Conferences Paper|