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dc.contributor.authorChang, TCen_US
dc.contributor.authorMor, YSen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorTsai, TMen_US
dc.contributor.authorChen, CWen_US
dc.contributor.authorMei, YJen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2014-12-08T15:43:16Z-
dc.date.available2014-12-08T15:43:16Z-
dc.date.issued2001-11-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0040-6090(01)01330-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/29281-
dc.description.abstractThe integration process, low-k hybrid-organic-siloxane-polymers (HOSP) and photoresist stripping process have been investigated. The dielectric properties of HOSP films are degradated after photoresist removal. This is because photoresist stripping processes destroy the functional groups and induce moisture uptake in HOSP films. In this study, NH3-plasma treatment was used for HOSP films to form a thin nitrogen-containing layer, preventing HOSP films from O-2 plasma ashing and chemical wet stripper damage during photoresist removal. The leakage current is decreased significantly and the dielecric constant is maintained at a low value after photoresist removal. These experimental results show that NH, treatment is a promising technique to enhance the resistance of HOSP films to the photoresist stripping process. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectammoniaen_US
dc.subjecthybird-organic-siloxane-polymeren_US
dc.subjectphotoresist strippingen_US
dc.titleThe effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damageen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0040-6090(01)01330-Xen_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume398en_US
dc.citation.issueen_US
dc.citation.spage632en_US
dc.citation.epage636en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000172906200109-
Appears in Collections:Conferences Paper


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