標題: The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damage
作者: Chang, TC
Mor, YS
Liu, PT
Tsai, TM
Chen, CW
Mei, YJ
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ammonia;hybird-organic-siloxane-polymer;photoresist stripping
公開日期: 1-Nov-2001
摘要: The integration process, low-k hybrid-organic-siloxane-polymers (HOSP) and photoresist stripping process have been investigated. The dielectric properties of HOSP films are degradated after photoresist removal. This is because photoresist stripping processes destroy the functional groups and induce moisture uptake in HOSP films. In this study, NH3-plasma treatment was used for HOSP films to form a thin nitrogen-containing layer, preventing HOSP films from O-2 plasma ashing and chemical wet stripper damage during photoresist removal. The leakage current is decreased significantly and the dielecric constant is maintained at a low value after photoresist removal. These experimental results show that NH, treatment is a promising technique to enhance the resistance of HOSP films to the photoresist stripping process. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0040-6090(01)01330-X
http://hdl.handle.net/11536/29281
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(01)01330-X
期刊: THIN SOLID FILMS
Volume: 398
Issue: 
起始頁: 632
結束頁: 636
Appears in Collections:Conferences Paper


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