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dc.contributor.authorLan, JKen_US
dc.contributor.authorWang, YLen_US
dc.contributor.authorLo, KYen_US
dc.contributor.authorLiu, CPen_US
dc.contributor.authorLiu, CWen_US
dc.contributor.authorWang, JKen_US
dc.contributor.authorCheng, YLen_US
dc.contributor.authorChau, CGen_US
dc.date.accessioned2014-12-08T15:43:16Z-
dc.date.available2014-12-08T15:43:16Z-
dc.date.issued2001-11-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0040-6090(01)01316-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/29280-
dc.description.abstractBoth collimated titanium (CO-Ti) and ion metal plasma titanium (IMP-Ti) have been widely used for plug liner layers. The focused ion beam (FIB) images of these films show that the IMP-Ti surface is granular and the CO-Ti surface is amorphous. It is concluded that the lower reflectivity and resistivity of IMP-Ti films are caused by the fact that IMP-Ti has a larger grain than that of the CO-Ti films. We define a grain size factor (GF) and find that the activation energy of grain growth of IMP-Ti film is 3.8 times larger than that of CO-Ti film. The electric measurement of vias resistance shows that IMP-Ti plug liner gives 13.6% higher via resistance and broader distribution than that of the CO-Ti plug liner. From the experimental data, we can conclude that there are three factors that make the IMP Ti plug liner process have higher vias resistance. These three factors are IMP-Ti resistivity, IMP-Ti thickness and CVD TiN thickness. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjection metal plasma (IMP) titaniumen_US
dc.subjectcollimated titaniumen_US
dc.subjectvias resistanceen_US
dc.titleIntegration of MOCVD titanium nitride with collimated titanium and ion metal plasma titanium for 0.18-mu m logic processen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0040-6090(01)01316-5en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume398en_US
dc.citation.issueen_US
dc.citation.spage544en_US
dc.citation.epage548en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000172906200093-
Appears in Collections:Conferences Paper


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